The role and expectation of the next -generation power device in the semiconductor industrial artificial satellite | Other news
Space Aerospace Research and Development Organization (JAXA) Research and Development Division 1st Research Unit
Chief Research and Developer Minoru Iwasa
In the communication broadcast satellite, which is the leading commercial satellite, the transition from orbit control to electrical promotion by chemical promotion to the purpose of reducing fuel, which accounts for half of satellite quality.In order to improve competitiveness in the market, it is important to increase the mounting rate of mission devices, and smaller power of power supply equipment, which has increased due to large electricity due to electrification, is an issue.The next -generation power device is the key to the solution.
■電源機器の小型軽量化 課題
The equipment composition of the satellite is roughly divided into three types: basic common equipment (bus equipment), which is indispensable in orbit operation, fuel (propulsion) for orbital control, and observation equipment and communication equipment.There are elements, and it is important to increase the mission device to improve competitiveness in the market.In the communication broadcast satellite, which is the leading commercial satellite, the transition from orbit control to electrical satellite (all -electrified satellite) by chemical promotion is being promoted in each country to reduce propellants.
The US Boeing succeeded in launching the world's first all-electric satellite (ABS-3A, Eutelsat115Westb) in March 2015, and then two in June 2016 (ABS-2A, Eutelsat117WESTB), 2017.One aircraft (SES-15) is launched a month, and a total of five aircraft are operated on orbit.The French Airbus launched one aircraft (Eutelsat172B) in June 2017, and the service was launched in October of the same year, and it was developed in the German OHB and French TAS.JAXA is also developing an all -electric satellite that applies large power hole starks to promote electricity as a technical test satellite No. 9.
FIG. 1 shows an example of mass configuration of a stationary orbital satellite, which occupies the majority of communication broadcast satellites.It shows a chemical promotion satellite on the left side in the figure, and an electric promotional satellite on the right, indicating that chemical promotion accounts for more than half of the overall quality.
While electricity promoting can be reduced to about one -fifth, the mass of power supply equipment has increased due to large power.In order to improve the mounting rate of mission devices, smaller weight of power supply equipment is important.
The main power supply equipment in all -electric satellites is a power control device (PCU = Power Control Unit) and an electric promotional power supply (PPU = Power Processing Unit) that control the power of the entire satellite.FIG. 2 shows a power supply system configuration diagram of the satellite.
The PCU has a function to stabilize the output of solar cells and control the charging and discharge to the battery, and is composed of shunt circuits, battery charging circuit (BCR), and battery discharge circuit (BDR).Of these, the BDR is a circuit that increases from the battery voltage (43-92 bolts) to the bus voltage (100 volts), and the percentage of PCU is large.
Therefore, JAXA is considering high-frequency of switching frequencies in order to reduce the size of BDR, and has been conducting a protest rating of a megahertz switching power supply that applies a gallium gallium electric field effect transistor (GAN-FET).The goal is to be reduced by half, but the increase in electromagnetic obstruction (EMI) noise due to high frequency has been confirmed, and measures are required.For space, it is also necessary to develop a high -frequency drive IC, inductor, and capacitor with power devices.
The PPU is composed of multiple power supply circuits as a propulsion power supply separately from the PCU.Among them, the anode power supply is a high -voltage accelerator for plasma acceleration in electrical promotion, and the output voltage is about 400 volts or more.In the anode power supply, the rectifier diode on the secondary side is the performance speed, and if a silicon carbide (SIC) diode is applied, a small and low heat and low heating can be expected.
■パワーデバイス 放射線耐性が重要
The most important performance for use in space is reliable.The communication satellite has recently been required to operate a 15-20 year, and during this time, the equipment must continue to work without exchanging.In particular, the failure of a PCU, which is responsible for the power control of the entire satellite, may spread to the total damage of the satellite, and is required to be reliable.
An important power device is radiation resistance.In outer space, various radiation particles such as electrons, protons, and heavy particles are flying around, so it is necessary to prevent them from breaking down even if these particles are fired in the device.
In the radiation failure mode, the permanent damage caused by the cumulative effect of the total radiation called the total dose effect (TID = TOTAL Ionizing Dose) and the single event effect (See = Single-Event Effect).There is a phenomenon that causes characteristic deterioration and permanent destruction due to the incident of particles and protons.
Studies have shown that SIC power devices have low radiation resistance (SEE) at high voltage.By radiation irradiation, the conventional SI increases the reverse current (leak current) at a stretch at a certain point in response to the rise in the opposite voltage, while the SIC gradually gradually increases with the rise in the opposite direction voltage.The leak current has risen and the events that deviate from the standard have been confirmed.The effects of radiation irradiation are considered to be at the stage where the rise in leak current is confirmed, but in the state of the device rated value, although it is within the rating, the reliability of the device is maintained.It is necessary to evaluate whether or not.
As an example of applying the next -generation power device in artificial satellites, the GAN High Electronic Transition Transistor (HEMT) is applied to the amplification circuit of the "Daichi No. 2" SAR antenna launched in May 2014.Compared to the device of the conventional SI metal oxide semiconductor electric field effect transistor (MOSFET), it has realized high -power and smaller weight, and plays a role in high -precision global observation in the event of a disaster.
This device is applied by a non -male -on element, but applying to a power supply requires no -make -off and high -bearing pressure, and no example of the application has been confirmed.In all -electric satellites, where international development competition is intensifying, high -power and smaller weight reduction of power supply equipment are important issues in improving competitiveness, and the next generation of power devices hold the key.It is not an exaggeration to say.
[Cheerful and lasting manufacturing equipment This year's sales, 2.3 trillion yen is expected to be 2.3 trillion]
1 trillion yen in the Japanese market in 20 years
The Japan Semiconductor Manufacturing Equipment Association (SEAJ) announced the demand forecast of the semiconductor manufacturing device in 2018-20 in 2018-20.Japan -made equipment sales in 2018 were 12 year -on -year.Estimated by 7%to 2,302.7 billion yen.It is expected to be 2,417.6 billion yen in 2019 and 2,538.5 billion yen in 2019, assuming that it will be strong after 2019.
Semiconductor consumption has been relied on the demand of specific products such as PCs and smartphones, but the amount of data has increased sharply due to video distribution and other data centers.Due to the 5G communication, IoT, AI/deep learning, and the full -scale of automatic driving, the demand for semiconductors has begun to show "multiple layers" due to 5G communication, IoT, AI/deep learning, and automatic driving.
According to the World Semiconductor Market Statistics (WSTS) in the spring of 2018, the world semiconductor market was 21 years from the previous year in 2017..Following the increase of 6%, 12 years of 18 years.It is expected to grow 4%, two digits for the second consecutive year.Here, the rise in memory unit prices has greatly contributed to the increase in sales.In the future, we will return to the original healthy growth trajectory, 4 in 2019.It is said that it will shift to 4%increase to stability growth.
Regarding capital investment, the market has expanded in 2017 due to aggressive investments of major logic manufacturers and memory manufacturers, mainly 3D-NAND.In 18 years, the investment of a major logic manufacturer and a 2ndory has been strong, and the memory maker will continue to invest in large-scale investments by shifting the center of gravity of investment from 3D-Nand to DRAM.After 2019, large -scale investments by Chinese local manufacturers are in full swing, and continuous expansion is expected.
Against this device market and capital investment trends, Seaj has compiled the following forecasts for semiconductor manufacturing equipment and the Japanese market sales and the Japanese market sales.
Regarding the sales volume of Japanese equipment, in 2018, the center of gravity of investment shifts from 3D-nand to DRAM, and large investment of memory makers continues, so 12 year-on-year..It is expected to increase by 7%to 2,302.7 billion yen.In 2019, the memory maker will continue to invest in 2019 and the number of 2 investments will increase 5.2,417.6 billion yen to 0%increase, for 20 years, the same 5.It was predicted by 0%to 2.538.5 billion yen.
In addition to the Japanese market sales, high-level investment is expected for 3D-NAND, DRAM, and image sensors in 2018, 14 year-on-year..It was expected to increase by 5%to 931.4 billion yen.The same 4 has been suggested in 19 years of continuous investment plans..968.3 billion yen, up 0%, for 20 years, from the expectation that the aggressive investment stance of each company will continue 4.It increases 0%to 1.71 billion yen.If the Japanese market exceeds 1 trillion yen, it will be since 2007.